Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint
نویسندگان
چکیده
We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected workfunction and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent ntype oxides and n-doped poly-Si. SiO2/n-poly-Si fullarea, induced-junction back surface field contacts to nFZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.
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