Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

نویسندگان

  • Paul Stradins
  • Ajeet Rohatgi
  • Stefan Glunz
  • Jan Benick
  • Frank Feldmann
  • Stephanie Essig
  • William Nemeth
  • Ajay Upadhyaya
  • Brian Rounsaville
  • Young - Woo Ok
  • Benjamin G. Lee
  • David Young
  • Andrew Norman
  • Yuanyue Liu
  • Jun - Wei Luo
  • Emily Warren
  • Arrelaine Dameron
  • Vincenzo LaSalvia
  • Matt Page
  • Martin Hermle
چکیده

We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected workfunction and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent ntype oxides and n-doped poly-Si. SiO2/n-poly-Si fullarea, induced-junction back surface field contacts to nFZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

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تاریخ انتشار 2014